P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.042 at V
GS
= - 10 V
0.072 at V
GS
= - 4.5 V
I
D
(A)
a, e
-6
7 nC
-6
Q
g
(Typ.)
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DTM4485
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 20
- 6
e
- 6
e
- 5.9
b, c
- 4.7
b, c
- 25
- 4.2
- 2
b, c
5
3.2
2.4
b, c
1.5
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
t
≤
10 s
Steady State
R
thJA
R
thJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package Limited.
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
