TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
10
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.10
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DTM4415
I
D
= 10 A
0.08
0.06
0.1
0.04
T
J
= 125 °C
0.01
0.02
T
J
= 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
I
D
= 250
µA
0.6
V
GS(th)
Variance
(V)
136
170
On-Resistance vs. Gate-to-Source Voltage
0.4
Power (W)
I
D
= 5 mA
0.2
102
68
0.0
34
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS
10
100
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
4
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