N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
()
0.0022 at V
GS
= 10 V
0.0025 at V
GS
= 6 V
0.0028 at V
GS
= 4.5 V
I
D
(A)
55
55
50
27.5 nC
a
www.din-tek.jp
DTL9604
FEATURES
Q
g
(Typ.)
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Low Q
g
for High Efficiency
TO-220AB
D
APPLICATIONS
•
Primary Side Switch
•
•
•
•
•
•
POL
Synchronous Rectifier
DC/DC Converter
Amusement System
Industrial
LED Backlighting
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (60 µs Pulse Width)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
I
DM
I
S
I
AS
E
AS
Symbol
V
DS
V
GS
I
D
Limit
60
± 20
55
a
55
a
35.8
b, c
28.6
b, c
350
55
a
5.6
b, c
40
80
104
66.6
6.25
b, c
4
b, c
- 55 to 150
260
A
Unit
V
Continuous Drain Current (T
J
= 150 °C)
mJ
Maximum Power Dissipation
P
D
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
