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1N5406 参数 Datasheet PDF下载

1N5406图片预览
型号: 1N5406
PDF下载: 下载PDF文件 查看货源
内容描述: 3 AMP通用硅二极管 [3 AMP GENERAL PURPOSE SILICON DIODES]
分类和应用: 二极管
文件页数/大小: 2 页 / 292 K
品牌: DEC [ DIOTEC ELECTRONICS CORPORATION ]
 浏览型号1N5406的Datasheet PDF文件第1页  
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDP-301-2B
3 AMP GENERAL PURPOSE SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES 1N5400 - 1N5408
6
Average Forward Current, Io
(Amperes)
5
4
2
1
0
0
50
100
150
180
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
100
10
Number of Cycles at 60Hz
FIGURE 2. FORWARD SURGE CURRENT
Instantaneous Forward Current
(Amperes)
10
Instantaneous Reverse Current, I
(Microamperes)
1.0
.1
1.0
0.1
T
J
= 25
o
C
0.1
NOTE 2
40
Percent of Rated Peak Reverse Voltage
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTICS
T
J
= 25
o
C
Capacitance, pF
NOTES
(1) Single Phase, Half Wave, 60 Hz; Lead Length = 0.375" (9.5mm)
(2) T = 25 C, Pulse Width = 300 Sec, 1.0% Duty Cycle
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Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE
A @ 9 7 8 7 6 5 4 32 1
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Peak Forward Surge Current
(Amperes)
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T
DS
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