DC COMPONENTS CO., LTD.
R
TIP42C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.405(10.28)
.380(9.66)
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.295(7.49)
.220(5.58)
.625(15.87)
.570(14.48)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25 C)
Total Power Dissipation
Junction Temperature
Storage Temperature
o
o
C)
Rating
-100
-100
-5
-6
65
2
+150
-55 to +150
Unit
V
V
V
A
W
W
o
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
T
STG
.350(8.90)
.330(8.38)
1 2 3
.640
Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
I
CES
I
CEO
I
EBO
(1)
Min
-100
-100
-
-
-
-
-
30
15
3
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-400
-700
-1
-1.5
-2
-
75
-
Unit
V
V
µA
µA
mA
V
V
-
-
MHz
Test Conditions
I
C
=-1mA, I
E
=0
I
C
=-30mA, I
B
=0
V
CE
=-100V
V
CE
=-60V
V
EB
=-5V
I
C
=-6A, I
B
=-0.6A
I
C
=-6A, V
CE
=-4V
I
C
=-0.3A, V
CE
=-4V
I
C
=-3A, V
CE
=-4V
I
C
=-0.1A, V
CE
=-5V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
Transition Frequency
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
DCCOM [ DC COMPONENTS ]
