DC COMPONENTS CO., LTD.
IRF840
R
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
V
DSS
= 500 Volts
R
DS(on)
= 0.8 Ohm
I
D
= 8.0 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
.625(15.87)
.570(14.48)
Description
Designed to withstand high energy in the avalanche mode and
switch efficiently. Also offer a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed applications
such as power supplies, PWM motor controls and other inductive
loads, the avalanche energy capability is specified to eliminate
the guesswork in designs where inductive loads are switched and
offer additional safety margin against unexpected voltage transients.
.151
Typ
(3.83)
.405(10.28)
.380(9.66)
Pinning
1 = Gate
2 = Drain
3 = Source
1
2
3
.350(8.90)
.330(8.38)
.640 Typ
(16.25)
Symbol
D
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
G
Dimensions in inches and (millimeters)
S
N-Channel MOSFET
Absolute Maximum Ratings
Characteristic
Drain Current @ T
C
=25
o
C
Gate-to-Source Voltage
Total Power Dissipation @ T
C
=25 C
Derate above 25
o
C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
o
Symbol
Continuous
Pulsed
I
D
I
DM
V
GS
P
D
T
J
T
STG
T
L
Rating
8.0
32
20
125
1.0
-55 to +150
-55 to +150
260
Unit
A
V
W
W/
o
C
o
o
o
C
C
C