IRF730
N-Channel Power MOSFET
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Source Inductance
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Thermal Resistance
(T
J
= 25
o
C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
V
SD
t
rr
t
on
Min
400
-
-
-
-
2.0
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.8
-
775
96
22
24
34
60
36
27
3.5
14
4.5
7.5
-
-
-
-
Max
-
0.25
1.0
100
-100
4.0
1.0
-
-
-
-
-
-
-
-
32
-
-
-
-
1.4
660
1.67
62.5
nH
nH
V
ns
Measured from the drain lead 0.25"
from package to center of die
Measured from the source lead 0.25"
from package to source bond pad
I
S
=5.0A, V
GS
=0V(Note)
I
F
=5.0A, di/dt=100A/µs(Note)
nC
V
DS
=320V, I
D
=5.0A, V
GS
=10V(Note)
ns
V
DD
=200V, I
D
=5.0A,
V
GS
=10V, R
G
=12Ω, R
L
=50Ω(Note)
pF
V
DS
=25V, V
GS
=0V, f=1.0MHz
nA
V
Ω
S
Unit
V
mA
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=400V, V
GS
=0V
V
DS
=320V, V
GS
=0V, T
J
=125
o
C
V
GSF
=20V, V
DS
=0V
V
GSR
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=2.5A(Note)
V
DS
= 15V, I
D
=2.5A(Note)
Intrinsic turn-on time is neglegible and dominated by inductance L
S
+L
D
o
Junction to Case
Junction to Ambient
300µs, Duty Cycle
R
θJC
R
θJA
2%
C/W -
Note: Pulse Test: Pulse Width
DC COMPONENTS CO., LTD.
R
DCCOM [ DC COMPONENTS ]
