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IRF640 参数 Datasheet PDF下载

IRF640图片预览
型号: IRF640
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET技术规格 [TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 2 页 / 206 K
品牌: DCCOM [ DC COMPONENTS ]
 浏览型号IRF640的Datasheet PDF文件第2页  
DC COMPONENTS CO., LTD.
IRF640
R
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
V
DSS
= 200 Volts
R
DS(ON)
= 0.18 Ohm
I
D
= 18 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
Description
Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
.151
Typ
(3.83)
.405(10.28)
.380(9.66)
Pinning
1 = Gate
2 = Drain
3 = Source
.625(15.87)
.570(14.48)
.350(8.90)
.330(8.38)
1
2
3
.640 Typ
(16.25)
Symbol
D
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
G
Dimensions in inches and (millimeters)
S
N-Channel MOSFET
Absolute Maximum Ratings
Characteristic
Drain Current @ T
C
=25
o
C
Gate-to-Source Voltage
Total Power Dissipation @ T
C
=25 C
Derate above 25
o
C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
o
Symbol
Continuous
Pulsed
I
D
I
DM
V
GS
P
D
T
J
T
STG
T
L
Rating
18
72
20
125
1.0
-55 to +150
-55 to +150
260
Unit
A
V
W
W/
o
C
o
o
o
C
C
C