DC COMPONENTS CO., LTD.
IRF630
R
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
V
DSS
= 200 Volts
R
DS(ON)
= 0.4 Ohm
I
D
= 9.0 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
Description
Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
.151
Typ
(3.83)
.405(10.28)
.380(9.66)
Pinning
1 = Gate
2 = Drain
3 = Source
.625(15.87)
.570(14.48)
.350(8.90)
.330(8.38)
1
2
3
.640 Typ
(16.25)
Symbol
D
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
G
Dimensions in inches and (millimeters)
S
N-Channel MOSFET
Absolute Maximum Ratings
Characteristic
Drain Current @ T
C
=25
o
C
Gate-to-Source Voltage
Total Power Dissipation @ T
C
=25 C
Derate above 25
o
C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
o
Symbol
Continuous
Pulsed
I
D
I
DM
V
GS
P
D
T
J
T
STG
T
L
Rating
9.0
36
20
74
0.59
-55 to +150
-55 to +150
300
Unit
A
V
W
W/
o
C
o
o
o
C
C
C
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