DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR03B
THRU
DCR03F
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 200 to 600 Volts
CURRENT - 0.3 Ampere
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 200 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-92
Pinning
1 = Gate, 2 = Anode, 3 = Cathode
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR03B
DCR03D
DCR03F
Symbol
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
T
J
T
STG
Rating
200
400
600
0.3
0.47
8
0.1
0.1
0.01
-40 to +110
-40 to +150
Unit
V
A
A
A
A
W
W
o
2 Typ
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
On-State Average Current
(T
A
=30
o
C, 180
o
Conduction Angles)
On-State RMS Current
(T
A
=30
o
C, 180
o
Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
.050
Typ
(1.27)
3 2 1
.148(3.76)
.132(3.36)
.050
Typ
o
o
5 Typ 5 Typ (1.27)
C
C
o
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
T
J
=25 C
T
J
=110 C
o
o
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
5.0
2.2
75
Max
10
100
1.7
200
0.8
5.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
o
Test Conditions
V
AK
=Rated V
DRM
or V
RRM
R
GK
=1KΩ
I
TM
=0.3A Peak
V
AK
=7V DC, R
L
=100Ω
V
AK
=7V DC, R
L
=100Ω
R
GK
=1KΩ
R
GK
=1KΩ
I
GT
=10mA
-
I
DRM
, I
RRM
V
TM
I
GT
V
GT
I
H
dv/dt
T
gt
R
θJC
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(t
D
+t
R
)
Thermal Resistance, Junction to Case
C/W
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