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DC9018 参数 Datasheet PDF下载

DC9018图片预览
型号: DC9018
PDF下载: 下载PDF文件 查看货源
内容描述: 作者: NPN外延平面型晶体管技术规格 [TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 213 K
品牌: DCCOM [ DC COMPONENTS ]
   
DC COMPONENTS CO., LTD.
R
DC9018
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
Rating
30
15
5
50
10
400
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
(1)
Min
30
15
5
-
-
28
700
-
2%
Typ
-
-
-
-
-
-
1100
1.3
Max
-
-
-
50
0.5
270
-
1.7
Unit
V
V
V
nA
V
-
MHz
pF
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=100µA
V
CB
=12V
I
C
=10mA, I
B
=1mA
I
C
=1mA, V
CE
=5V
I
C
=5mA, V
CE
=5V
V
CB
=10V, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
(1)
V
CE(sat)
h
FE
f
T
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
C
ob
380µs, Duty Cycle
Classification of h
FE
Rank
Range
D
28~45
E
39~60
F
54~80
G
72~108
H
97~146
I
132~198
J
180~270