DC COMPONENTS CO., LTD.
R
DC8050S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
.500
Min
(12.70)
o
o
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
o
C)
Rating
25
20
5
700
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
Symbol
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
25
20
5
-
-
-
-
85
-
150
-
2%
Typ
-
-
-
-
-
-
-
-
170
-
-
Max
-
-
-
1
0.1
0.6
1
500
-
-
10
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=20V
V
EB
=6V
I
C
=0.5A, I
B
=50mA
I
C
=150mA, V
CE
=1V
I
C
=150mA, V
CE
=1V
I
C
=500mA, V
CE
=1V
I
C
=20mA, V
CE
=10V, f=100MHz
V
CB
=10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of h
FE1
Rank
Range
B
85~160
C
100~200
D
150~300
E
250~500
DCCOM [ DC COMPONENTS ]
