DC COMPONENTS CO., LTD.
R
BD237D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for medium power linear and switching
applications.
TO-126ML
Pinning
1 = Emitter
2 = Collector
3 = Base
.148(3.75)
.138(3.50)
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.060(1.52)
.050(1.27)
.146(3.70)
.136(3.44)
.123(3.12)
.113(2.87)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (peak)
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
.300(7.62)
.290(7.37)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
100
80
5
2
6
25
+150
-55 to +150
Unit
V
V
V
A
A
W
o
o
.180
Typ
(4.56)
.591(15.0)
.551(14.0)
1 2 3
.084(2.12)
.074(1.87)
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.084(2.14)
.074(1.88)
.027(0.69)
.017(0.43)
.090
Typ
(2.28)
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
100
80
5
-
-
-
-
40
25
3
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.1
1
0.6
1.3
-
-
-
Unit
V
V
V
mA
mA
V
V
-
-
I
C
=1mA
Test Conditions
I
C
=100mA
I
E
=100µA
V
CB
=100V
V
EB
=5V
I
C
=1A, I
B
=0.1A
I
C
=1A, V
CE
=2V
I
C
=150mA, V
CE
=2V
I
C
=1A, V
CE
=2V
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
MHz I
C
=250mA, V
CE
=10V, f=100MHz
380µs, Duty Cycle
2%
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