DC COMPONENTS CO., LTD.
R
2SD879
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1.5V and 3V electronic flash.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
o
C)
Rating
30
20
10
6
3
5
750
+150
-55 to +150
Unit
V
V
V
V
A
A
mW
o
o
Symbol
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
30
20
10
6
-
-
-
140
-
-
Typ
-
-
-
-
-
-
0.3
210
200
30
Max
-
-
-
-
100
100
0.4
400
-
-
Unit
V
V
V
V
nA
nA
V
-
MHz
pF
Test Conditions
I
C
=10µA
I
C
=1mA,V
BE
=3V
I
C
=1mA
I
E
=10µA
V
CB
=20V
V
BE
=4V
I
C
=3A, I
B
=60mA
I
C
=3A, V
CE
=2V
I
C
=50mA, V
CE
=10V
V
CB
=10V, f=1MHz
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
(1)
V
CE(sat)
h
FE
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
DCCOM [ DC COMPONENTS ]
