DC COMPONENTS CO., LTD.
R
2SD313
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general-purpose amplifier and switching
applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.405(10.28)
.380(9.66)
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.295(7.49)
.220(5.58)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
T
STG
Rating
60
60
5
3
2
30
+150
-55 to +150
Unit
V
V
V
A
W
W
o
o
.625(15.87)
.570(14.48)
1 2 3
.350(8.90)
.330(8.38)
.640
Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
(1)
Min
60
60
5
-
-
-
-
-
40
40
-
Typ
-
-
-
-
-
-
-
-
-
-
8
Max
-
-
-
0.1
5
1
1
1.5
320
-
-
Unit
V
V
V
mA
mA
mA
V
V
-
-
MHz
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=4V, I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=1A, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.1A, V
CE
=2V
I
C
=0.5A, V
CE
=5V
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
380µs, Duty Cycle 2%
Classification of h
FE1
Rank
Range
C
40~80
D
60~120
E
100~200
F
160~320
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