DC COMPONENTS CO., LTD.
R
2SA733
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
applicatioms.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
o
C)
Rating
-60
-50
-5
-100
-20
250
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
o
o
Symbol
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-60
-50
-5
-
-
-
-0.55
90
100
-
2%
Typ
-
-
-
-
-
-0.18
-0.62
200
180
4.5
Max
-
-
-
-0.1
-0.1
-0.3
-0.7
600
-
6
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
I
C
=-100µA, I
E
=0
I
E
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-100mA, I
B
=-10mA
I
C
=-1mA, V
CE
=-6V
I
C
=-1mA, V
CE
=-6V
I
C
=-10mA, V
CE
=-6V
V
CB
=-10V, I
E
=0, f=1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Volatge
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
V
CE(sat)
V
BE(on)
h
FE
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of h
FE
Rank
Range
R
90~180
Q
135~270
P
200~400
K
300~600
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