DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power
amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
TO-92
2 Typ
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
T
STG
Rating
-20
-20
-10
-6
-2
-5
-2
750
+150
-55 to +150
Unit
V
V
V
V
A
A
A
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-10
-6
-
-
-
-
140
60
-
-
Typ
-
-
-
-
-0.3
-0.83
-
-
140
50
Max
-
-
-100
-100
-0.5
-1.5
1000
-
-
-
Unit
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CE
=-20V, I
E
=0
V
BE
=-6V, I
C
=0
I
C
=-2A, I
B
=-50mA
I
C
=-2A, V
CE
=-1V
I
C
=-0.5A, V
CE
=-1V
I
C
=-2A, V
CE
=-1V
I
C
=-0.5A, V
CE
=-1V
V
CE
=-10V, f=1KHz, I
E
=0
Collector-Emitter Breakdown Volatge
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
V
CE(sat)
V
BE
h
FE1
h
FE2
f
T
C
ob
380µs, Duty Cycle
2%
Classification of h
FE1
Rank
Range
Y
140~280
GR
200~400
BL
300~600
PE
500~1000
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