DC COMPONENTS CO., LTD.
R
2N7002
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Gate
2 = Source
3 = Drain
3
o
Absolute Maximum Ratings
(T
A
=25
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source Voltage (Continuous)
Drain Current (Continuous, T
C
=25 C)
Drain Current (Pulsed)
(2)
o
(1)
C)
Rating
60
60
20
115
800
200
1.8
-55 to+150
-55 to+150
260
Unit
V
V
V
mA
mA
mW
o
mW/ C
o
o
o
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
1
2
Symbol
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
J
T
STG
T
L
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
Total Power Dissipation
o
Derate above 25 C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature, for
10 Seconds Solding Purpose
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.0043(0.11)
.0035(0.09)
C
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Sourse Forward Leakage Current
Gate-Sourse Reverse Leakage Current
Gate Threshold Voltage
On-State Drain Current
(2)
(2)
(2)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
V
DS(on)1
V
DS(on)2
(2)
Min
60
-
-
-
1
500
-
-
-
-
80
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
1
100
-100
2.5
-
0.375
3.75
7.5
7.5
-
50
25
5
625
Unit
V
µA
nA
nA
V
mA
V
V
Ω
Ω
mS
pF
pF
pF
o
Test Conditions
I
D
=10µA, V
GS
=0
V
DS
=60V, V
GS
=0
V
GSF
=20V, V
DS
=0
V
GSR
=-20V, V
DS
=0
V
DS
=2.5V, I
D
=0.25mA
V
DS
>2V
DS(on)
, V
GS
=10V
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
V
DS
>2V
DS(on)
, I
D
=200mA
V
DS
=25V, V
GS
=0, f=1MHZ
-
Static Drain-Source On-State Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(2)
R
DS(on)1
R
DS(on)2
g
FS
C
iss
C
oss
C
rss
R
θJA
Thermal Resistance, Junction to Ambient
C/W
(1)The Power Dissipation of the package may result in a lower continuous drain current.
(2)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
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