DC COMPONENTS CO., LTD.
R
2N2955
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and
shunt regulators, output stages and high fidelity
amplifiers.
TO-3
1.573
Max
(39.96)
.875(22.23)
.759(19.28)
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
Pinning
1 = Base
2 = Emitter
Case = Collector
.135
Max
(3.43)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
CEV
V
EBO
I
C
I
B
P
D
T
J
T
STG
Rating
-100
-60
-70
-7
-15
-
7
Unit
V
V
V
V
A
A
W
o
o
.225(5.72)
.205(5.20)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
1
Case: Collector
.169(4.30)
.151(3.84)
115
+200
-65 to +200
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Emitter Sustaining Volatge
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
V
CEO(sus)
V
CER(sus)
I
CEO
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
DC Current Gain
(1)
Second Breakdown Collector with
Base Forward Bias
Current Gain - Bandwidth Product
Small-Signal Current Gain
Small-Signal Current Gain Cutoff Frequency
(1)Pulse Test: Pulse Width
300µs, Duty Cycle
(1)
Min
-60
-70
-
-
-
-
-
-
-
20
5
-2.87
2.5
15
10
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-0.7
-1
-5
-5
-1.1
-3
-1.5
70
-
-
-
120
-
Unit
V
V
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
KHz
Test Conditions
I
C
=-0.2A, I
B
=0
I
C
=-0.2A, R
BE
=100Ω
V
CE
=-30V, I
B
=0
V
CE
=-100V, V
BE(off)
=-1.5V
V
CE
=-100V, V
BE(off)
=-1.5V, T
C
=150 C
V
BE
=-7V, I
C
=0
I
C
=-4A, I
B
=-0.4A
I
C
=-10A, I
B
=-3.3A
I
C
=-4A, V
CE
=-4V
I
C
=-4A, V
CE
=-4V
I
C
=-10A, V
CE
=-4V
V
CE
=-40V, t=1.0s, Non-repetitive
I
C
=-0.5A, V
CE
=-10V, f=1MHz
I
C
=-10A, V
CE
=-4V, f=1KHz
I
C
=-1A, V
CE
=-4V, f=1KHz
o
I
CEX
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(on)
h
FE1
h
FE2
Is/b
f
T
h
fe
f
hfe
2%
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