TO-92 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
FEATURE
Complementary to S9012
Excellent h
FE
linearity
MAXIMUM RATINGS
T
A
=25℃ unless otherwise noted
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
500
625
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(sat)
V
CE
=1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
=6V,I
C
=20mA,f=30MHz
150
40
0.6
1.2
V
V
MHz
Test
conditions
MIN
40
25
5
0.1
0.1
0.1
64
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
= 100μA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 100μA , I
C
=0
V
CB
= 40V ,
V
CE
=20V ,
I
E
=0
I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
=50mA
Transition frequency
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
J
300-400
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
