SOT-23 Plastic-Encapsulate Transistors
SOT-23
S8550
TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
Complimentary to S8050
Collector current: I
C
=0.5A
MARKING :
2TY
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-40
-25
-5
-0.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
CE
= -1V, I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
= -6V, I
C
= -20mA
150
50
-0.6
-1.2
V
V
MHz
Test
conditions
I
E
=0
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
400
MAX
UNIT
V
V
V
I
C
= -100
μ
A,
I
C
=-1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
μ
A
μ
A
μ
A
f
T
h
FE(1)
L
120-200
f=
30MHz
H
CLASSIFICATION OF
Rank
Range
200-350
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
