TO-92 Plastic-Encapsulate Transistors
MPS2907A
TRANSISTOR (PNP)
TO-92
FEATURES
Complementary NPN Type available (MPS2222A)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-0.6
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
t
d
t
r
t
S
t
f
Test
conditions
MIN
-60
-60
-5
-10
-50
-10
78
100
52
-0.4
-0.67
-1
-1.2
200
10
25
225
60
V
V
V
V
MHz
nS
nS
nS
nS
300
TYP
MAX
UNIT
V
V
V
nA
nA
nA
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
V
CE
=-30V,V
EB(off)
=-0.5V
V
EB
=-3V,I
C
=0
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
V
CC
=-30V,Ic=-150mA,I
B1
=-15mA
V
CC
=-6V,Ic=-150mA,
I
B1
=I
B2
=-15mA
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF
Rank
Range
h
FE(2)
L
100-200
H
200-300
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
