SOT-23
M8050
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
SOT-23
FEATURES
Power dissipation
1.
BASE
2.
EMITTER
MARKING: Y11
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
3.
COLLECTOR
Value
40
25
6
0.8
0.2
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off
current
Symbol
V(BR)
CBO
V(BR)
CEO
*
V(BR)
EBO
I
CBO
I
CEO
Test
conditions
MIN
40
25
6
0.1
0.1
45
80
40
0.5
1.2
150
V
V
MHz
300
MAX
UNIT
V
V
V
μA
μA
I
C
= 100μA, I
E
=0
I
C
=1mA , I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 35V, I
E
=0
V
CE
= 20V, I
B
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
= 800mA, I
B
=80mA
I
C
=800mA, I
B
= 80mA
V
CE
=6V, I
C
= 20mA , f=30MHz
h
FE(1)
DC current gain
h
FE(2)
h
FE
（
3
）
V
CE(sat)
V
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
f
T
* Pulse Test : pulse width
≤
300µs , duty cycle
≤2%.
CLASSIFICATION OF
Rank
Range
h
FE(2)
L
80-200
H
200-300
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
