TO-92 Plastic-Encapsulate Transistors
A94
FEATURES
High voltage
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-400
-400
-5
-0.2
0.625
150
-55 to +150
Units
V
V
V
A
W
℃
℃
3. COLLECTOR
1 2 3
1. EMITTER
2. BASE
TRANSISTOR (PNP)
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR) CBO
V
(BR) CEO
V
(BR) EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
V
CE (sat)
Collector-emitter saturation voltage
V
CE (sat)
Base-emitter saturation voltage
Transition frequency
V
BE (sat)
f
T
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
= -1mA
V
CE
=-20V, I
C
=-10mA
f =30MHz
50
-0.3
-0.75
V
V
MHz
Test
conditions
MIN
-400
-400
-5
-0.1
-5
-0.1
80
70
60
-0.2
V
300
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
= -100μA, I
E
=0
I
C
= -1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100mA
I
C
=-10mA, I
B
=-1mA
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
