TO-92L Plastic-Encapsulate Transistors
2SA684
FEATURES
∙
Automatic insertion by radial taping possible.
·
Complementary pair with 2SC1384.
1. EMITTER
2. COLLECTOR
3. BASE
TRANSISTOR (PNP)
TO-92L
123
MAXIMUM RATINGS(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-60
-50
-5
-1
0.75
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
unless
otherwise
specified)
MIN
-60
-50
-5
-0.1
85
50
-0.2
-0.85
200
20
30
-0.4
-1.2
V
V
MHz
pF
340
TYP
MAX
UNIT
V
V
V
μA
conditions
I
C
=-10uA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-10V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
E
=50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
Q
85-170
R
120-240
S
170-340
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
