DS276
+ELECTRICAL CHARACTERISTICS-5V OPERATION
(tA = 0°C to 70°C)
PARAMETER
SYMBOL
MIN TYP MAX UNITS NOTES
Logic Supply Voltage
Dynamic Supply Current
VCC
4.5
5
5.5
V
IDRV1
ICC1
IDRV1
ICC1
TXIN = VCC
TXIN = VCC
TXIN = GND
TXIN = GND
400
40
3.8
40
800
100
5
uA
uA
mA
uA
1
1
1
1
100
Static Supply Current
IDRV2
ICC2
IDRV2
ICC2
TXIN = VCC
TXIN = VCC
TXIN = GND
TXIN = GND
1.5
10
3.8
10
10
15
5
uA
uA
mA
uA
2
2
2
2
20
Driver Leakage Current
TXOUT Level High
IDRV3
VCC = 0
0.05
1
uA
3
VDRV+=VCC=
4.5V
VDRV-=0
3.3
10
3.8
11
V
V
4
5
VOTXH
VDRV+=12V,
VDRV-=-12V
VDRV +=
VCC=12V
V
DRV-=12V
-11
0.2
-10
0.3
V
V
4
5
6
TXOUT Level Low
VOTXL
VDRV+=VCC
VDRV-=0
TXOUT Short Circuit Current
ISC
VDRV+ = 12V,
VDRV- = -12V
85
30
mA
V/us
us
TXOUT Output Slew Rate
Propagation Delay
tSR
tPD
5
7
8
RXIN Input Threshold Low
RXIN Input Threshold High
RXIN Threshold Hysteresis
RXOUT Output Current High
VTL
VTH
VHYS
IOH
0.8
1.6
0.5
1.2
2
6
2
V
V
0.8
V
VCC = 4.5V
V
OH = 2.4V
-1
mA
mA
RXOUT Output Current Low
IOL
VCC = 4.5V
VOL = 0.4V
3
NOTES:
1. See test circuit in Figure 9.
2. See test circuit in Figure 10.
3. See test circuit in Figure 11.
4. RL = 3 kΩ to ground. Max data rate = 20 kbps.
5. RL = 3 kΩ to ground. Max data rate = 100 kbps.
8 of 11
DALLAS [ DALLAS SEMICONDUCTOR ]
