DS1035
Ambient Temperature:
25°C
±=3°C
Supply Voltage (V
CC
):
5.0V
±=0.1V
Input Pulse:
High: 3.0V
±=0.1V
Low: 0.0V
±=0.1V
Source Impedance: 50Ω=max.
Rise and Fall Time: 3.0 ns max. - Measured between 0.6V and 2.4V.
Pulse Width: 500 ns
Pulse Period: 1
µs
Output Load Capacitance: 15 pF
Output:
Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
Note:
The above conditions are for test only and do not restrict the devices under other data sheet
conditions.
TEST CONDITIONS
TIMING DIAGRAM
NOTES:
1. All voltages are referenced to ground.
2. @ V
CC
=5 volts and 25°C, delay accuracy on both the rising and falling edges within tolerances given
in Table 1.
3. Pulse width and duty cycle specifications may be exceeded; however, accuracy will be application
sensitive with respect to decoupling, layout, etc.
5 of 6
DALLAS [ DALLAS SEMICONDUCTOR ]
