POWER TRANSISTOR E13005
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-220 molded plastic body
Q
1
2 3
TO-220
±T ±
S E ATING
P L ANE
B
F
4
T
C
S
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
U
K
H
Z
L
V
G
D
N
R
J
NPN SILICON TRANSISTOR
FEATURES
o
INC HE S
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
±±±
±±± 0.080
MIL L IME TE R S
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
±±±
±±±
2.04
Tc=25 C unless otherwise specified
Parameter
Power dissipation
Collector current (DC)
Collector current (Pulse)
Operating and storage junction temperature range
Symbol
P
C
I
C
I
CP
T
J
, T
STG
o
Value
75
4.0
8.0
-55 C to +150 C
o
UNIT
W
A
A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Tc=25 C unless otherwise specified
o
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
t
f
t
s
Test conditions
I
C
=1mA , I
E
=0
I
C
=10mA , I
B
=0
I
E
=1mA , I
C
=0
V
CB
=600V , I
E
=0
V
CE
=300V , I
B
=0
V
EB
=9V , I
C
=0
V
CE
=5V , I
C
=1A
I
C
=2A , I
B
=500mA
I
C
=2A , I
B
=500mA
V
CE
=10V , I
C
=500mA
f=1MHz
I
C
=2A , I
B1
=-I
B2
=0.4mA ,
V
CC
=125V
MIN
700
400
9
MAX
UNIT
V
V
V
1
100
1
10
40
0.6
1.6
5
0.9
4
mA
μ
A
mA
V
V
MHz
μ
S
μ
S
DAESAN [ DAESAN ELECTRONICS CORP. ]
