POWER TRANSISTOR E13003
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-126 molded plastic body
TO-126
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425 0.435
0.295
0.305
0.095 0.105
0.020 0.026
0.115 0.130
0.094 BSC
0.050 0.095
0.015 0.025
0.575 0.655
5 TYP
0.148 0.158
0.045 0.065
0.025 0.035
0.145 0.155
0.040
±±±
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61 16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
±±±
±B ±
U
Q
F
±A ±
M
C
1 2 3
H
K
V
G
S
D
2 PL
J
R
0.25 (0.010)
M
M
NPN SILICON TRANSISTOR
FEATURES
Tc=25 C unless otherwise specified
o
A
B
M
B
M
0.25 (0.010)
A
M
M
Parameter
Collector dissipation
Collector current (DC)
Collector current (Pulse)
Operating and storage junction temperature range
Symbol
P
C
I
C
I
CP
T
J
, T
STG
o
o
Value
20
1.5
3
-55 C to +150 C
o
UNIT
W
A
A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
Tc=25 C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CEsat
V
BEsat
V
BE
f
T
t
f
t
s
Test conditions
I
C
=1mA , I
E
=0
I
C
=10mA , I
B
=0
I
E
=1mA , I
C
=0
V
CB
=700V , I
E
=0
V
CE
=400V , I
B
=0
V
EB
=9V , I
C
=0
V
CE
=2V , I
C
=0.5mA
V
CE
=10V , I
C
=0.5mA
I
C
=1A , I
B
=250mA
I
C
=1A , I
B
=250mA
I
E
=2A
V
CE
=10V , I
C
=100mA
f=1MHz
I
C
=1A , I
B1
=-I
B2
=0.2mA ,
V
CC
=100V
MIN
700
400
9
MAX
UNIT
V
V
V
1
500
1
8
5
1
1.2
3
5
0.5
2.5
40
mA
μ
A
mA
V
V
V
MHz
μ
S
μ
S
DAESAN [ DAESAN ELECTRONICS CORP. ]
