POWER TRANSISTOR E13001
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-92 molded plastic body
A
DIM
SEATING
PLANE
TO-92
INCHES
MIN
MAX
0.175 0.205
0.290 0.310
0.125 0.165
0.018 0.022
0.016 0.019
0.045 0.055
0.095 0.105
0.018 0.024
0.500
---
0.250
---
0.080 0.105
---
0.100
0.135
---
0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
---
6.35
---
2.04
2.66
---
2.54
3.43
---
3.43
---
R
P
F
L
B
K
G
H
V
D
J
N C
A
B
C
D
F
G
H
J
K
L
N
P
R
V
NPN SILICON TRANSISTOR
FEATURES
Tc=25 C unless otherwise specified
o
1 2 3
N
Parameter
Power dissipation
Collector current
Operating and storage junction temperature range
Symbol
P
CM
I
CM
T
J
, T
STG
o
Value
0.75
0.2
-55 C to +150 C
o
UNIT
W
A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
Tc=25 C unless otherwise specified
o
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CEsat
V
BEsat
V
BE
f
T
t
f
t
s
Test conditions
I
C
=100
μ
A , I
E
=0
I
C
=1mA , I
B
=0
I
E
=100
μ
A , I
C
=0
V
CB
=600V , I
E
=0
V
CE
=400V , I
B
=0
V
EB
=7V , I
C
=0
V
CE
=20V , I
C
=20mA
V
CE
=10V , I
C
=0.25mA
I
C
=50mA , I
B
=10mA
I
C
=50mA , I
B
=10mA
I
E
=100mA
V
CE
=20V , I
C
=20mA
f=1MHz
I
C
=50mA , I
B1
=-I
B2
=5mA ,
V
CC
=45V
MIN
600
400
7
MAX
UNIT
V
V
V
100
200
100
10
5
0.5
1.2
1.1
8
0.3
1.5
70
μ
A
μ
A
μ
A
V
V
V
MHz
μ
S
μ
S
DAESAN [ DAESAN ELECTRONICS CORP. ]
