ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6292
(C )
A
1N6293
(C )
1N6293
(C )
A
1N6294
(C )
1N6294
(C )
A
1N6295
(C )
1N6295
(C )
A
1N6296
(C )
1N6296
(C )
A
1N6297
(C )
1N6297
(C )
A
1N6298
(C )
1N6298
(C )
A
1N6299
(C )
1N6299
(C )
A
1N6300
(C )
1N6300
(C )
A
1N6301
(C )
1N6301
(C )
A
1N6302
(C )
1N6302
(C )
A
1N6303
(C )
1N6303
(C )
A
General
Semiconductor
Part
Number
1.5K E 75
(C )
A
1.5K E 82
(C )
1.5K E 82
(C )
A
1.5K E 91
(C )
1.5K E 91
(C )
A
1.5K E 100
(C )
1.5K E 100
(C )
A
1.5K E 110
(C )
1.5K E 110
(C )
A
1.5K E 120
(C )
1.5K E 120
(C )
A
1.5K E 130
(C )
1.5K E 130
(C )
A
1.5K E 150
(C )
1.5K E 150
(C )
A
1.5K E 160
(C )
1.5K E 160
(C )
A
1.5K E 170
(C )
1.5K E 170
(C )
A
1.5K E 180
(C )
1.5K E 180
(C )
A
1.5K E 200
(C )
1.5K E 200
(C )
A
1.5K E 220
(C )
1.5K E 220
(C )
A
1.5K E 250
(C )
1.5K E 250
(C )
A
1.5K E 300
(C )
1.5K E 300
(C )
A
1.5K E 350
(C )
1.5K E 350
(C )
A
1.5K E 400
(C )
1.5K E 400
(C )
A
1.5K E 440
(C )
1.5K E 440
(C )
A
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes : (1)
(2)
(3)
(4)
P uls e tes t: t
p =
50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35
For bidirectional types with V
R
10 volts and les s the I
D
limit is doubled
A pplic ation
¥ T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components.
¥ T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to electronic circuitry
(ref: R .E .A. s pecification P.E . 60).
¥ T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 watts for one millis econd. T he res pons e time of T V S diode clamping action is
effectively ins tantaneous (1 x 10
-9
s econds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage s ens itive s emi-
conductors and components. T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings.
DAESAN [ DAESAN ELECTRONICS CORP. ]
