CYStech Electronics Corp.
6A NPN Epitaxial Planar Power Transistor
Spec. No. : C611E3
Issued Date : 2004.07.14
Revised Date :
Page No. : 1/3
TIP41CE3
Description
TIP41CE3 is designed for use in general purpose amplifier and switching applications.
•
Low collector-emitter saturation voltage, V
CE(sat)
= 1.5V(max) @ I
C
= 6A
•
High collector-emitter sustaining voltage
,
BV
CEO(SUS)
= 100V(min)
•
High current gain-bandwidth product , f
T
= 3MHz(min) @ I
C
= 500mA
Features
Symbol
TIP41CE3
Outline
TO-220AB
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
100
100
5
6
10
(Note 1)
2
2
65
62.5
1.923
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
TIP41CE3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
