CYStech Electronics Corp.
Spec. No. : C303S3C
Issued Date : 2003.10.07
Revised Date :
. .
Page No. : 1/4
DAN217S3
HIGH-SPEED SWITCHING DIODE
Description
The DAN217S3 consists of two diodes in a plastic surface mount package. The diodes are
connected in series and the unit is designed for high-speed switching application in hybrid thick
and thin-film circuits.
Features
•
Small SMD Package (SOT-323)
•
Ultra-high Speed
•
Low Forward Voltage
•
Fast Reverse Recovery Time
Equivalent Circuit
Outline
3
K1, A2
1
2
1. Anode 1
2. Cathode 2
3. Cathode 1 / Anode 2
A1
K2
Sot-323
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 200 mW
•
Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................. 70 V
Forward Current ............................................................................................................. 150 mA
Repetitive Forward Current ............................................................................................ 500 mA
Forward Surge Current (1ms)....................................................................................... 1000 mA
DAN217S3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
