CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP953L3
Features
•
5 Amps continuous current, up to 10 Amps peak current
•
Very low saturation voltage
•
Excellent gain characteristics specified up to 10 Amps
•
Ptot=3Watts
•
Extremely low equivalent on resistance, R
CE(SAT)
=70m
Ω
at 4A
•
Pb-free package
Symbol
BTP953L3
Outline
SOT-223
C
E
B：Base
C：Collector
E：Emitter
C
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @T
A
=25°C
Operating and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj ; Tstg
Limits
-140
-100
-6
-5
-10
-1
3
(Note)
-55 ~ +150
Unit
V
V
V
A
A
A
W
°C
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTP953L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
