CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTP5401A3
Description
•
The BTP5401A3 is designed for general purpose amplification.
•
Large I
C
, I
C( Max)
= -0.6A
•
High BV
CEO
, BV
CEO
= -150V
•
Complementary to BTN5551A3
.
Symbol
BTP5401A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
EBC
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
-160
-150
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401A3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
