CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 1/4
BTNA42A3
Description
•
High breakdown voltage. (BV
CEO
=300V)
•
Low collector output capacitance. (Typ. 3pF at V
CB
=30V)
•
Ideal for chroma circuit.
Symbol
BTNA42A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
300
300
6
500
625
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTNA42A3
CYStek Product Specification