CYStech Electronics Corp.
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCE=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Characteristic Curves
Current Gain vs Collector Current
100000
Saturation Voltage---(mV)
HFE@VCE=5V
Current Gain---
HFE
10000
VCE(SAT)@IC=1000IB
Saturation Voltage vs Collector Current
10000
1000
1000
1
10
100
1000
Collector Current---IC(mA)
100
1
10
100
1000
Collector Current ---IC(mA)
BTNA14N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
