CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTNA06N3
Description
•
The BTNA06N3 is designed for use in general purpose amplification and switching application.
•
High current , I
C
= 0.5A
•
Low V
CE(sat)
, V
CE(sat)
= 0.25V(typ.) at I
C
/I
B
= 100mA/10mA
•
Complementary to BTPA56N3
.
Symbol
BTNA06N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
80
80
4
500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTNA06N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
