BTN8050BA3 参数 Datasheet PDF下载

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistor

Spec. No. : C223A3-B

Issued Date : 2004.02.18

Revised Date :

2004.02.23

Page No. : 1/4

BTN8050BA3

Description

The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation.

•

High collector current , I

C

= 1.5A

•

Low V

CE(sat)

•

Complementary to BTP8550BA3

.

Features

Symbol

BTN8050BA3

Outline

TO-92

B：Base

C：Collector

E：Emitter

EBC

Absolute Maximum Ratings

(Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pd

Tj

Tstg

Limits

40

25

6

1.5

1

150

-55~+150

Unit

V

V

V

A

W

°C

°C

BTN8050BA3

CYStek Product Specification