CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 1/5
BTN1053M3
Features
•
2W power dissipation
•
Excellent H
FE
Characteristics up to 1A
•
Low Saturation Voltage
V
CE(sat)
=0.15V(typ)(I
C
=1A,I
B
=50mA).
•
5A peak pulse current
SOT-89
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(
Note 1)
Power Dissipation@Ta=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
150
75
5
1.5
5
1
(Note 2)
2
(Note 3)
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note 1: Single pulse, Pw≤300µs, Duty Cycle≤2%.
2: When the device is mounted on a FR-4 PCB measuring 15
×
15
×
0.6mm.
3: When the device is mounted on a ceramic substrate measuring 40
×
40
×
0.6mm.
BTN1053M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
