CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
BTD882T3/S
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772T3/S
•
Pb-free package is available
Symbol
BTD882T3
Outline
TO-126
B：Base
C：Collector
E：Emitter
E C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw
≦
350µs,Duty
≦
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
P
d
(Ta=25℃)
P
d
(Tc=25℃)
Tj
Tstg
Limit
40
30
5
3
7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
BTD882T3/S
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
