CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848D3-H
Issued Date : 2005.05.04
Revised Date :
Page No. : 1/4
BTD882D3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 200mA
•
Excellent current gain characteristics
•
Complementary to BTB772D3
•
Pb-free package
Symbol
BTD882D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
EC B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
50
50
5
3
7
(Note)
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
BTD882D3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
