CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 1/5
BTD2150A3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 100mA
0.1V at I
C
/ I
B
= 1A / 50mA
•
Excellent current gain characteristics
•
Complementary to BTB1424A3
•
Pb-free package
Symbol
BTD2150A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350
µ
s,Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd
Tj
Tstg
Limit
80
50
6
3
7
(Note)
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTD2150A3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
