CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 1/4
BTD2098M3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386M3
Symbol
BTD2098M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
40
20
6
5
8
0.6
1
2
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
*1
*2
*3
Note : *1 Single pulse , Pw=10ms
*2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm.
*3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
