CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850N3
Issued Date : 2004.01.28
Revised Date :2005.07.15
Page No. : 1/5
BTD2098LN3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386LN3
•
Pb-free package
Symbol
BTD2098LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1.Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
25
15
6
5
8
(Note 1)
0.9
(Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
2.When mounted on a ceramic board with area of 600mm²×0.8mm
BTD2098LN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
