CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847I3-D9065T
Issued Date : 2003.03.26
Revised Date :
Page No. : 1/4
BTD2097AI3
Features
•
Low V
CE
(sat), V
CE(sat)
=0.35 V (typical), at I
C
/ I
B
= 4A / 0.1A
•
Excellent current gain characteristics
•
Complementary to BTB1412AI3
Symbol
BTD2097AI3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd@ T
A
=25℃
Pd@ T
C
=25℃
Tj
Tstg
Limits
50
20
6
5
10
1
10
150
-55~+150
Unit
V
V
V
*1
*2
A
W
°C
°C
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%.
*2. When mounted on a 40*40*0.7mm ceramic board.
BTD2097AI3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
