CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 1/4
BTD2061FP
Features
•
Low saturation voltage, typically V
CE
(sat)=0.2V at I
C
/I
B
=2A/0.2A.
•
Excellent DC current gain characteristics.
•
Wide SOA(safe operating area).
•
Pb-free package.
Symbol
BTD2061FP
Outline
TO-220FP
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTD2061FP
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
80
60
5
3
6
(Note 1)
2
30
62.5
4.167
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
