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BTD2012FP 参数 Datasheet PDF下载

BTD2012FP图片预览
型号: BTD2012FP
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 176 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
1000
Spec. No. : C822FP
Issued Date : 2005.07.29
Revised Date :
Page No. : 3/ 5
Saturation Voltage vs Collector Current
Current Gain---HFE
100
VCE=5V
100
VCESAT@IC=20IB
VCE=2V
VCESAT@IC=10IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBESAT@IC=10IB
Output Characteristics
6
100mA
Collector Current---IC(A)
5
4
3
2
1
0
50mA
30mA
20mA
10mA
IB=5mA
1000
IB=0mA
100
1
10
100
1000
10000
Collector Current---IC(mA)
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
On Voltage vs Collector Current
10000
Power Dissipation---PD(W)
Power Derating Curve
2.5
2
1.5
1
0.5
0
VBEON@VCE=2V
On Voltage---(mV)
1000
100
1
10
100
1000
10000
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD2012FP
CYStek Product Specification