CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :
Page No. : 1/4
BTD1980J3
Description
The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application.
Equivalent Circuit
BTD1980J3
B
C
Outline
TO-252
E
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
R
θJA
R
θJC
Tj
Tstg
Limits
130
120
5
4
6
(Note )
1.5
20
83.3
6.25
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
BTD1980J3
CYStek Product Specification