BTD1816I3 参数 Datasheet PDF下载

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

Spec. No. : C821I3

Issued Date : 2005.10.05

Revised Date :2009.02.04

Page No. : 1/6

BTD1816I3

Features

•

Low collector-to-emitter saturation voltage

•

High-speed switching

•

Large current capability

•

Good linearity of h

FE

•

High f

T

•

RoHS compliant package

BV

CEO

I

C

R

CESAT

100V

4A

50mΩ

Applications

•

Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.

Symbol

BTD1816I3

Outline

TO-251

B：Base

C：Collector

E：Emitter

B C E

B C

BTD1816I3

CYStek Product Specification